Influence of Grain size on the Electrical Properties of ${ m Sb_2Te_3}$ Polycrystalline Films

摘要

Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between100-500nm has been measured in vacuum. It is found that the resistance of thepolycrystalline films strongly depends on the grain size and inter-granularvoids. The charge carrier are shown to cross this high resistivity inter-granular void by ohmic conduction. The barrier height as well as temperaturecoefficient of resistance are also shown to depend on the grain size and inter-grain voids.